How does the height of the potential barrier change in forward bias and reverse bias?

(N/A) In a $PN$ junction diode,the potential barrier is formed due to the diffusion of charge carriers across the junction.
$1$. In forward bias,the external voltage opposes the internal potential barrier. This reduces the width of the depletion region and lowers the height of the potential barrier.
$2$. In reverse bias,the external voltage supports the internal potential barrier. This increases the width of the depletion region and raises the height of the potential barrier.